skip to main content

Title: Near-infrared photodetectors utilizing MoS{sub 2}-based heterojunctions

Near-infrared photodetectors are developed using graphene/MoS{sub 2} and WSe{sub 2}/MoS{sub 2} vertical heterojunctions. These heterojunctions exhibit diode-rectifying behavior in the dark and enhanced photocurrent upon near-infrared irradiation. The photocurrent increases with increasing near-infrared power, leading to the photoresponsibility of 0.14 and 0.3 A W{sup −1} for the graphene/MoS{sub 2} and WSe{sub 2}/MoS{sub 2} heterojunctions, respectively, which are much higher than the photoresponsibility reported for a multilayer MoS{sub 2} phototransistor.
Authors:
; ; ; ;  [1] ;  [2]
  1. Department of Physics, Yonsei University, Seoul 120-749 (Korea, Republic of)
  2. ProteomeTech Inc., Seoul 120-749 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22499250
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; GRAPHENE; HETEROJUNCTIONS; MOLYBDENUM SULFIDES; NEAR INFRARED RADIATION; PHOTODETECTORS; TUNGSTEN SELENIDES