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Title: High-mobility BaSnO{sub 3} grown by oxide molecular beam epitaxy

High-mobility perovskite BaSnO{sub 3} films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO{sub 3} films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnO{sub x}. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO{sub 3}. We demonstrate room temperature electron mobilities of 150 cm{sup 2} V{sup −1} s{sup −1} in films grown on PrScO{sub 3}. The results open up a wide range of opportunities for future electronic devices.
Authors:
; ; ; ; ;  [1]
  1. Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)
Publication Date:
OSTI Identifier:
22499246
Resource Type:
Journal Article
Resource Relation:
Journal Name: APL Materials; Journal Volume: 4; Journal Issue: 1; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRON MOBILITY; ELECTRONIC EQUIPMENT; FILMS; MOLECULAR BEAM EPITAXY; MONOCRYSTALS; OXIDES; PEROVSKITE; SEMICONDUCTOR MATERIALS; STANNATES; VOLATILITY