skip to main content

Title: Epitaxial growth of high quality WO{sub 3} thin films

We have grown epitaxial WO{sub 3} films on various single-crystal substrates using radio frequency magnetron sputtering. While pronounced surface roughness is observed in films grown on LaSrAlO{sub 4} substrates, films grown on Y AlO{sub 3} substrates show atomically flat surfaces, as demonstrated by atomic force microscopy and X-ray diffraction (XRD) measurements. The crystalline structure has been confirmed to be monoclinic by symmetric and skew-symmetric XRD. The dependence of the growth modes and the surface morphology on the lattice mismatch are discussed.
Authors:
; ;  [1] ;  [1] ;  [2] ;  [1] ;  [3]
  1. Brookhaven National Laboratory, Upton, New York 11973 (United States)
  2. (Slovenia)
  3. (United States)
Publication Date:
OSTI Identifier:
22499239
Resource Type:
Journal Article
Resource Relation:
Journal Name: APL Materials; Journal Volume: 3; Journal Issue: 9; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMIC FORCE MICROSCOPY; CRYSTAL DEFECTS; EPITAXY; MAGNETRONS; MONOCLINIC LATTICES; MONOCRYSTALS; RADIOWAVE RADIATION; SPUTTERING; SUBSTRATES; SURFACES; THIN FILMS; TUNGSTATES; TUNGSTEN OXIDES; X-RAY DIFFRACTION