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Title: Strain accommodation through facet matching in La{sub 1.85}Sr{sub 0.15}CuO{sub 4}/Nd{sub 1.85}Ce{sub 0.15}CuO{sub 4} ramp-edge junctions

Scanning nano-focused X-ray diffraction and high-angle annular dark-field scanning transmission electron microscopy are used to investigate the crystal structure of ramp-edge junctions between superconducting electron-doped Nd{sub 1.85}Ce{sub 0.15}CuO{sub 4} and superconducting hole-doped La{sub 1.85}Sr{sub 0.15}CuO{sub 4} thin films, the latter being the top layer. On the ramp, a new growth mode of La{sub 1.85}Sr{sub 0.15}CuO{sub 4} with a 3.3° tilt of the c-axis is found. We explain the tilt by developing a strain accommodation model that relies on facet matching, dictated by the ramp angle, indicating that a coherent domain boundary is formed at the interface. The possible implications of this growth mode for the creation of artificial domains in morphotropic materials are discussed.
Authors:
; ; ; ;  [1] ; ;  [2]
  1. MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands)
  2. Electron Microscopy for Materials Science (EMAT), Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp (Belgium)
Publication Date:
OSTI Identifier:
22499236
Resource Type:
Journal Article
Resource Relation:
Journal Name: APL Materials; Journal Volume: 3; Journal Issue: 8; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL STRUCTURE; DOPED MATERIALS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION