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Title: Research Update: Stoichiometry controlled oxide thin film growth by pulsed laser deposition

The oxidation of species in the plasma plume during pulsed laser deposition controls both the stoichiometry as well as the growth kinetics of the deposited SrTiO{sub 3} thin films, instead of the commonly assumed mass distribution in the plasma plume and the kinetic energy of the arriving species. It was observed by X-ray diffraction that SrTiO{sub 3} stoichiometry depends on the composition of the background gas during deposition, where in a relative small pressure range between 10{sup −2} mbars and 10{sup −1} mbars oxygen partial pressure, the resulting film becomes fully stoichiometric. Furthermore, upon increasing the oxygen (partial) pressure, the growth mode changes from 3D island growth to a 2D layer-by-layer growth mode as observed by reflection high energy electron diffraction.
Authors:
; ; ; ; ; ; ; ;  [1]
  1. Faculty of Science and Technology and MESA+ Institute for Nanotechnology, University of Twente, 7500 AE Enschede (Netherlands)
Publication Date:
OSTI Identifier:
22499230
Resource Type:
Journal Article
Resource Relation:
Journal Name: APL Materials; Journal Volume: 3; Journal Issue: 7; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CONTROL; DEPOSITS; ELECTRON DIFFRACTION; ENERGY BEAM DEPOSITION; ISLANDS; KINETIC ENERGY; KINETICS; LASER RADIATION; MASS DISTRIBUTION; OXIDATION; OXIDES; OXYGEN; PARTIAL PRESSURE; PULSED IRRADIATION; STRONTIUM TITANATES; THIN FILMS; X-RAY DIFFRACTION