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Title: In situ controlled heteroepitaxy of single-domain GaP on As-modified Si(100)

Metalorganic vapor phase epitaxy of III-V compounds commonly involves arsenic. We study the formation of atomically well-ordered, As-modified Si(100) surfaces and subsequent growth of GaP/Si(100) quasisubstrates in situ with reflection anisotropy spectroscopy. Surface symmetry and chemical composition are measured by low energy electron diffraction and X-ray photoelectron spectroscopy, respectively. A two-step annealing procedure of initially monohydride-terminated, (1 × 2) reconstructed Si(100) in As leads to a predominantly (1 × 2) reconstructed surface. GaP nucleation succeeds analogously to As-free systems and epilayers free of antiphase disorder may be grown subsequently. The GaP sublattice orientation, however, is inverted with respect to GaP growth on monohydride-terminated Si(100)
Authors:
;  [1] ;  [2] ;  [2] ; ; ;  [1] ; ;  [1] ;  [2]
  1. Institut für Physik, Technische Universität Ilmenau, Gustav-Kirchhoff-Str. 5, 98693 Ilmenau (Germany)
  2. (Germany)
Publication Date:
OSTI Identifier:
22499228
Resource Type:
Journal Article
Resource Relation:
Journal Name: APL Materials; Journal Volume: 3; Journal Issue: 12; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANISOTROPY; ANNEALING; ARSENIC; CHEMICAL COMPOSITION; ELECTRON DIFFRACTION; GALLIUM PHOSPHIDES; NUCLEATION; SURFACES; VAPOR PHASE EPITAXY; X-RAY PHOTOELECTRON SPECTROSCOPY