skip to main content

SciTech ConnectSciTech Connect

Title: Crystallization engineering as a route to epitaxial strain control

The controlled synthesis of epitaxial thin films offers opportunities for tuning their functional properties via enabling or suppressing strain relaxation. Examining differences in the epitaxial crystallization of amorphous oxide films, we report on an alternate, low-temperature route for strain engineering. Thin films of amorphous Bi–Fe–O were grown on (001)SrTiO{sub 3} and (001)LaAlO{sub 3} substrates via atomic layer deposition. In situ X-ray diffraction and X-ray photoelectron spectroscopy studies of the crystallization of the amorphous films into the epitaxial (001)BiFeO{sub 3} phase reveal distinct evolution profiles of crystallinity with temperature. While growth on (001)SrTiO{sub 3} results in a coherently strained film, the same films obtained on (001)LaAlO{sub 3} showed an unstrained, dislocation-rich interface, with an even lower temperature onset of the perovskite phase crystallization than in the case of (001)SrTiO{sub 3}. Our results demonstrate how the strain control in an epitaxial film can be accomplished via its crystallization from the amorphous state.
Authors:
; ;  [1] ;  [2] ;  [1] ;  [3]
  1. Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104 (United States)
  2. Department of Physics, Rowan University, Glassboro, New Jersey 08028 (United States)
  3. (United States)
Publication Date:
OSTI Identifier:
22499215
Resource Type:
Journal Article
Resource Relation:
Journal Name: APL Materials; Journal Volume: 3; Journal Issue: 10; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINATES; CRYSTALLIZATION; DISLOCATIONS; EPITAXY; LANTHANUM COMPOUNDS; OXIDES; PEROVSKITE; STRAINS; STRONTIUM TITANATES; SUBSTRATES; SYNTHESIS; THIN FILMS; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY