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Title: Energies of the X- and L-valleys in In{sub 0.53}Ga{sub 0.47}As from electronic structure calculations

Several theoretical electronic structure methods are applied to study the relative energies of the minima of the X- and L-conduction-band satellite valleys of In{sub x}Ga{sub 1−x}As with x = 0.53. This III-V semiconductor is a contender as a replacement for silicon in high-performance n-type metal-oxide-semiconductor transistors. The energy of the low-lying valleys relative to the conduction-band edge governs the population of channel carriers as the transistor is brought into inversion, hence determining current drive and switching properties at gate voltages above threshold. The calculations indicate that the position of the L- and X-valley minima are ∼1 eV and ∼1.2 eV, respectively, higher in energy with respect to the conduction-band minimum at the Γ-point.
Authors:
;  [1] ;  [2]
  1. Tyndall National Institute, Lee Maltings, Prospect Row, Cork (Ireland)
  2. Department of Materials Science and Engineering, University of Texas at Dallas, 800 West Campbell Road RL10, Richardson, Texas 75080 (United States)
Publication Date:
OSTI Identifier:
22494995
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 119; Journal Issue: 5; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION SPECTROSCOPY; CARRIERS; ELECTRONIC STRUCTURE; OXIDES; PERFORMANCE; SEMICONDUCTOR MATERIALS; SILICON; TRANSISTORS; X-RAY SPECTROSCOPY