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Title: Weak antilocalization and universal conductance fluctuations in bismuth telluro-sulfide topological insulators

We report on van der Waals epitaxial growth, materials characterization, and magnetotransport experiments in crystalline nanosheets of Bismuth Telluro-Sulfide (BTS). Highly layered, good-quality crystalline nanosheets of BTS are obtained on SiO{sub 2} and muscovite mica. Weak-antilocalization (WAL), electron-electron interaction-driven insulating ground state and universal conductance fluctuations are observed in magnetotransport experiments on BTS devices. Temperature, thickness, and magnetic field dependence of the transport data indicate the presence of two-dimensional surface states along with bulk conduction, in agreement with theoretical models. An extended-WAL model is proposed and utilized in conjunction with a two-channel conduction model to analyze the data, revealing a surface component and evidence of multiple conducting channels. A facile growth method and detailed magnetotransport results indicating BTS as an alternative topological insulator material system are presented.
Authors:
; ; ;  [1]
  1. Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States)
Publication Date:
OSTI Identifier:
22494994
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 119; Journal Issue: 5; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BISMUTH; ELECTRON-ELECTRON COLLISIONS; ELECTRON-ELECTRON INTERACTIONS; EPITAXY; FLUCTUATIONS; GROUND STATES; MAGNETIC FIELDS; MUSCOVITE; NANOSTRUCTURES; SILICON OXIDES; SULFIDES; TOPOLOGY; TWO-DIMENSIONAL SYSTEMS; VAN DER WAALS FORCES