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Title: Interface properties of Si-SiO{sub 2}-Ta{sub 2}O{sub 5} structure by cathodoluminescence spectroscopy

We studied formation of the SiO{sub 2}-T{sub 2}O{sub 5} interface in the Si-SiO{sub 2}-Ta{sub 2}O{sub 5} structure using Cathodoluminescence Spectroscopy (CLS). Analyzing the evolution of CLS spectrum of the Si-SiO{sub 2} structure while depositing the Ta{sub 2}O{sub 5} layer allowed to estimate an optical transmittance of the Ta{sub 2}O{sub 5} layer and its band gap. Spectral features related to the formation of the SiO{sub 2}-Ta{sub 2}O{sub 5} interface were identified by comparison of the experimental CL spectrum of the Si-SiO{sub 2}-Ta{sub 2}O{sub 5} structure and its simulated counterpart. This formation involves a decomposition of silanol groups at the outer surface of the SO{sub 2} layer and creation of the Si{sub x}Ta{sub y}O-type layer containing luminescence centers with the emission band centered at 3‚ÄČeV photon energy.
Authors:
; ; ; ;  [1] ;  [1] ;  [2]
  1. St. Petersburg State University, St. Petersburg 198504 (Russian Federation)
  2. (Australia)
Publication Date:
OSTI Identifier:
22494988
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 119; Journal Issue: 5; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CATHODOLUMINESCENCE; INTERFACES; LAYERS; SILICON OXIDES; SIMULATION; SPECTROSCOPY; SULFUR DIOXIDE; TANTALUM OXIDES