Nano-textured high sensitivity ion sensitive field effect transistors

Hajmirzaheydarali, M.; Sadeghipari, M.; Akbari, M.; Shahsafi, A.

doi:10.1063/1.4940915

Title: Nano-textured high sensitivity ion sensitive field effect transistors

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Abstract

Nano-textured gate engineered ion sensitive field effect transistors (ISFETs), suitable for high sensitivity pH sensors, have been realized. Utilizing a mask-less deep reactive ion etching results in ultra-fine poly-Si features on the gate of ISFET devices where spacing of the order of 10 nm and less is achieved. Incorporation of these nano-sized features on the gate is responsible for high sensitivities up to 400 mV/pH in contrast to conventional planar structures. The fabrication process for this transistor is inexpensive, and it is fully compatible with standard complementary metal oxide semiconductor fabrication procedure. A theoretical modeling has also been presented to predict the extension of the diffuse layer into the electrolyte solution for highly featured structures and to correlate this extension with the high sensitivity of the device. The observed ultra-fine features by means of scanning electron microscopy and transmission electron microscopy tools corroborate the theoretical prediction.

Authors:: Hajmirzaheydarali, M.; Sadeghipari, M.; Akbari, M.; Shahsafi, A.

Publication Date:: Sun Feb 07 00:00:00 EST 2016

OSTI Identifier:: 22494976

Resource Type:: Journal Article

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 119; Journal Issue: 5; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979

Country of Publication:: United States

Language:: English

Subject:: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ETCHING; FABRICATION; FIELD EFFECT TRANSISTORS; IONS; NANOSTRUCTURES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SENSITIVITY; SENSORS; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats


                    Hajmirzaheydarali, M., Sadeghipari, M., Akbari, M., Shahsafi, A., and Mohajerzadeh, S., E-mail: mohajer@ut.ac.ir. Nano-textured high sensitivity ion sensitive field effect transistors.  United States: N. p., 2016. 
        Web.  doi:10.1063/1.4940915.

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                    Hajmirzaheydarali, M., Sadeghipari, M., Akbari, M., Shahsafi, A., & Mohajerzadeh, S., E-mail: mohajer@ut.ac.ir. Nano-textured high sensitivity ion sensitive field effect transistors.  United States.  https://doi.org/10.1063/1.4940915

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                    Hajmirzaheydarali, M., Sadeghipari, M., Akbari, M., Shahsafi, A., and Mohajerzadeh, S., E-mail: mohajer@ut.ac.ir. 2016.  
        "Nano-textured high sensitivity ion sensitive field effect transistors".  United States.  https://doi.org/10.1063/1.4940915.

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@article{osti_22494976,

  title        = {Nano-textured high sensitivity ion sensitive field effect transistors},

  author       = {Hajmirzaheydarali, M. and Sadeghipari, M. and Akbari, M. and Shahsafi, A. and Mohajerzadeh, S., E-mail: mohajer@ut.ac.ir},

  abstractNote = {Nano-textured gate engineered ion sensitive field effect transistors (ISFETs), suitable for high sensitivity pH sensors, have been realized. Utilizing a mask-less deep reactive ion etching results in ultra-fine poly-Si features on the gate of ISFET devices where spacing of the order of 10 nm and less is achieved. Incorporation of these nano-sized features on the gate is responsible for high sensitivities up to 400 mV/pH in contrast to conventional planar structures. The fabrication process for this transistor is inexpensive, and it is fully compatible with standard complementary metal oxide semiconductor fabrication procedure. A theoretical modeling has also been presented to predict the extension of the diffuse layer into the electrolyte solution for highly featured structures and to correlate this extension with the high sensitivity of the device. The observed ultra-fine features by means of scanning electron microscopy and transmission electron microscopy tools corroborate the theoretical prediction.},

  doi          = {10.1063/1.4940915},

  url          = {https://www.osti.gov/biblio/22494976},
  journal      = {Journal of Applied Physics},

  issn         = {0021-8979},

  number       = 5,

  volume       = 119,

  place        = {United States},

  year         = {Sun Feb 07 00:00:00 EST 2016},

  month        = {Sun Feb 07 00:00:00 EST 2016}

}

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