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Title: Ab-initio simulations of higher Miller index Si:SiO{sub 2} interfaces for fin field effect transistor and nanowire transistors

Models of three representative higher Miller index interfaces, Si(310):SiO{sub 2}, Si(410):SiO{sub 2}, and Si(331):SiO{sub 2}, have been built by an ab-initio molecular dynamics method. We show that each interface can be made as a fully bonded network without any defects and has a reasonable electronic structure for use in fin field effect transistors or gate-all-around nanowire devices. The differences in numbers of oxygen bridges are attributed to the intermediate sub-oxide components and the atomic step structure. The interface bonding schemes to passivate different densities of dangling bonds on different facets are also analyzed.
Authors:
; ;  [1] ;  [2]
  1. Engineering Department, Cambridge University, Cambridge CB2 1PZ (United Kingdom)
  2. Taiwan Semiconductor Manufacturing Company (TSMC), Hsinchu Science Park, Hsinchu, Taiwan (China)
Publication Date:
OSTI Identifier:
22494973
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 119; Journal Issue: 5; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRONIC STRUCTURE; FIELD EFFECT TRANSISTORS; INTERFACES; MOLECULAR DYNAMICS METHOD; SILICON OXIDES; SIMULATION