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Title: Polymerization of defect states at dislocation cores in InAs

Dislocations are essentially lines of point defects which can act as recombination centers in semiconductor devices. These point defects do not behave as isolated defects. Their spatial proximity enables them to hybridize into a one-dimensional band, and the distribution of resulting defect-band states is determined by both the position of the band and its dispersion. In the case of glissile 90° partial dislocations in III-V semiconductors, the dislocation core can adopt a variety of different reconstructions. Each of these reconstructions has a different arrangement of point defects, which affects the hybridization into defect bands and their associated dispersion. Here, we illustrate these principles by performing first-principles calculations for InAs and find that some defect levels for InAs dislocations lie outside of the band gap where they cannot act as recombination centers. To provide some insight into the electronic structure of dislocations in ternary alloys, some examples relevant to InGaAs and GaAsP are included.
Authors:
; ;  [1] ;  [2] ;  [1] ;  [3]
  1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
  2. Department of Emerging Materials Science, DGIST, Daegu 711-873 (Korea, Republic of)
  3. (China)
Publication Date:
OSTI Identifier:
22494965
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 119; Journal Issue: 4; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DISLOCATIONS; ELECTRONIC STRUCTURE; GALLIUM ARSENIDES; INDIUM ARSENIDES; POINT DEFECTS; POLYMERIZATION; RECOMBINATION; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; TERNARY ALLOY SYSTEMS