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Title: All-epitaxial Co{sub 2}FeSi/Ge/Co{sub 2}FeSi trilayers fabricated by Sn-induced low-temperature epitaxy

We demonstrate low-temperature growth of all-epitaxial Co{sub 2}FeSi/Ge/Co{sub 2}FeSi trilayer structures by developing Sn-induced surfactant-mediated molecular beam epitaxy (SMBE) of Ge on Co{sub 2}FeSi. Despite the growth of a semiconductor on a metal, we verify that the inserted Sn monolayers between Ge and Co{sub 2}FeSi enable to promote the 2D epitaxial growth of Ge up to 5 nm at a T{sub G} of 250 °C. An understanding of the mechanism of the Sn-induced SMBE leads to the achievement of all-epitaxial Co{sub 2}FeSi/Ge/Co{sub 2}FeSi trilayer structures with spin-valve-like magnetization reversals. This study will open a way for vertical-type and high-performance Ge-based spintronics devices.
Authors:
; ; ; ; ;  [1]
  1. Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka 560-8531 (Japan)
Publication Date:
OSTI Identifier:
22494956
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 119; Journal Issue: 4; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CRYSTAL GROWTH; MAGNETIZATION; MOLECULAR BEAM EPITAXY; PERFORMANCE; SEMICONDUCTOR MATERIALS; SPIN; SURFACTANTS; TEMPERATURE RANGE 0400-1000 K; VALVES