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Title: Improving the structural quality and electrical resistance of SrTiO{sub 3} thin films on Si (001) via a two-step anneal

We report on the optimization of structural and electrical properties of SrTiO{sub 3} thin films grown on Si (001) by hybrid molecular beam epitaxy. Using a dual buffer layer template, 46-nm-thick films grown at high temperatures (850 °C) resulted in a layer-by-layer growth mode and a good crystalline quality with rocking curve full width at half maximum (FWHM) of the 002 SrTiO{sub 3} peak of nearly 0.6°, which was reduced to 0.4° by increasing the film thickness to 120 nm. A high temperature post-deposition anneal was employed to further reduce the rocking curve FWHM down to 0.2° while preserving a smooth film surface morphology. The low sheet resistance of as-grown and post-growth annealed samples was increased by five orders of magnitude exceeding 10{sup 7} Ω/◻ using a lower temperature anneal in dry air. This two-step annealing method provides an easy and effective way to improve the crystalline quality of SrTiO{sub 3} thin films on Si, providing a path towards the development of electrically insulating, wafer scale virtual perovskite substrates.
Authors:
; ;  [1]
  1. Department of Materials Science and Engineering and Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
Publication Date:
OSTI Identifier:
22494955
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 119; Journal Issue: 4; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; ELECTRIC CONDUCTIVITY; LAYERS; MOLECULAR BEAM EPITAXY; NEUTRON DIFFRACTION; PEROVSKITE; STRONTIUM TITANATES; SUBSTRATES; TEMPERATURE RANGE 1000-4000 K; THICKNESS; THIN FILMS