Improving the structural quality and electrical resistance of SrTiO{sub 3} thin films on Si (001) via a two-step anneal
- Department of Materials Science and Engineering and Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
We report on the optimization of structural and electrical properties of SrTiO{sub 3} thin films grown on Si (001) by hybrid molecular beam epitaxy. Using a dual buffer layer template, 46-nm-thick films grown at high temperatures (850 °C) resulted in a layer-by-layer growth mode and a good crystalline quality with rocking curve full width at half maximum (FWHM) of the 002 SrTiO{sub 3} peak of nearly 0.6°, which was reduced to 0.4° by increasing the film thickness to 120 nm. A high temperature post-deposition anneal was employed to further reduce the rocking curve FWHM down to 0.2° while preserving a smooth film surface morphology. The low sheet resistance of as-grown and post-growth annealed samples was increased by five orders of magnitude exceeding 10{sup 7} Ω/◻ using a lower temperature anneal in dry air. This two-step annealing method provides an easy and effective way to improve the crystalline quality of SrTiO{sub 3} thin films on Si, providing a path towards the development of electrically insulating, wafer scale virtual perovskite substrates.
- OSTI ID:
- 22494955
- Journal Information:
- Journal of Applied Physics, Vol. 119, Issue 4; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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