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Title: Effect of sputtering pressure on microstructure and bolometric properties of Nb:TiO{sub 2−x} films for infrared image sensor applications

This study aims to investigate the influence of the sputtering pressure (P{sub S}) on Nb:TiO{sub 2−x} films to enhance the bolometric properties. A decrease in the growth rate with the sputtering pressure was perceived in amorphous Nb:TiO{sub 2−x} films. The incorporation of oxygen with P{sub S} was confirmed in an X-ray photo electron spectroscopy analysis. The electrical resistivity was increased with an increase in P{sub S} due to a decrease in the number of oxygen vacancies. The linear I-V characteristics confirmed the ohmic contact behavior between the Nb:TiO{sub 2−x} layer and the electrode material. The present investigation finds that the sample with lower resistivity has good bolometric properties with low noise and high universal bolometric parameters. Finally, the Nb:TiO{sub 2−x} sample deposited at a sputtering pressure of 2 mTorr shows better bolometric properties than other materials for infrared image sensor applications.
Authors:
; ; ;  [1]
  1. Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, 335 Gwahangno, Yuseong-gu, Daejeon 305-701 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22494947
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 119; Journal Issue: 4; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BOLOMETERS; ELECTRIC CONDUCTIVITY; ELECTRODES; ELECTRON SPECTROSCOPY; FILMS; IMAGES; LAYERS; MATERIALS; MICROSTRUCTURE; NOISE; OXYGEN; SENSORS; SPUTTERING; TITANIUM OXIDES; VACANCIES; X RADIATION