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Title: Photoluminescence study of high density Si quantum dots with Ge core

Si quantum dots (Si-QDs) with Ge core were self-assembled on thermally grown SiO{sub 2} from alternate thermal decomposition of pure SiH{sub 4} and GeH{sub 4} diluted with He. When the sample was excited by the 979 nm line of a semiconductor laser, fairly broad photoluminescence (PL) spectra in the region of 0.6–0.8 eV were observed at room temperature. The observed PL spectra suggested that radiative recombination of photo-generated carriers through quantized states of Ge core is the dominant pathway for the emission from the dots, reflecting the type II energy band discontinuity between the Si clad and Ge core. We also found that P-δ doping to Ge core plays an important role in recombination through the quantized states in the valence band of Ge core and P donor levels.
Authors:
; ; ;  [1]
  1. Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)
Publication Date:
OSTI Identifier:
22494922
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 119; Journal Issue: 3; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIERS; EV RANGE; GERMANIUM HYDRIDES; PHOTOLUMINESCENCE; PYROLYSIS; QUANTUM DOTS; RECOMBINATION; SEMICONDUCTOR LASERS; SILANES; SILICA; SILICON OXIDES; SPECTRA; TEMPERATURE RANGE 0273-0400 K; VALENCE