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Title: Electrical and structural properties of In-implanted Si{sub 1−x}Ge{sub x} alloys

We report on the effects of dopant concentration and substrate stoichiometry on the electrical and structural properties of In-implanted Si{sub 1−x}Ge{sub x} alloys. Correlating the fraction of electrically active In atoms from Hall Effect measurements with the In atomic environment determined by X-ray absorption spectroscopy, we observed the transition from electrically active, substitutional In at low In concentration to electrically inactive metallic In at high In concentration. The In solid-solubility limit has been quantified and was dependent on the Si{sub 1−x}Ge{sub x} alloy stoichiometry; the solid-solubility limit increased as the Ge fraction increased. This result was consistent with density functional theory calculations of two In atoms in a Si{sub 1−x}Ge{sub x} supercell that demonstrated that In–In pairing was energetically favorable for x ≲ 0.7 and energetically unfavorable for x ≳ 0.7. Transmission electron microscopy imaging further complemented the results described earlier with the In concentration and Si{sub 1−x}Ge{sub x} alloy stoichiometry dependencies readily visible. We have demonstrated that low resistivity values can be achieved with In implantation in Si{sub 1−x}Ge{sub x} alloys, and this combination of dopant and substrate represents an effective doping protocol.
Authors:
; ; ; ;  [1] ;  [2] ;  [3] ;  [4] ; ;  [5] ;  [6]
  1. Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 0200 (Australia)
  2. Nuclear Science and Technology Department, Brookhaven National Laboratory, Upton, New York 11973 (United States)
  3. KU Leuven, Instituut voor Kern-en Stralingsfysica, 3001 Leuven (Belgium)
  4. Australian Synchrotron, 800 Blackburn Road, Clayton, Victoria 3168 (Australia)
  5. Department of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C (Denmark)
  6. Department of Applied Physics, School of Applied Sciences, RMIT University, Melbourne 3001 (Australia)
Publication Date:
OSTI Identifier:
22494919
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 119; Journal Issue: 2; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION SPECTROSCOPY; ALLOYS; ATOMS; DENSITY FUNCTIONAL METHOD; HALL EFFECT; SOLUBILITY; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X-RAY SPECTROSCOPY