Point defects: Their influence on electron trapping, resistivity, and electron mobility-lifetime product in CdTe{sub x}Se{sub 1−x} detectors
- Brookhaven National Laboratory, Upton, New York 11973 (United States)
- Alabama A&M University (ECMIT), Normal, Alabama 35762 (United States)
In this research, we assessed the abundance of point defects and their influence on the resistivity, the electron mobility-lifetime (μτ{sub e}) product, and the electron trapping time in CdTeSe crystals grown under different conditions using the traveling heater method. We used current-deep level transient spectroscopy to determine the traps' energy, their capture cross-section, and their concentration. Further, we used these data to determine the trapping and de-trapping times for the charge carriers. The data show that detectors with a lower concentration of In-dopant have a higher density of A-centers and Cd double vacancies (V{sub Cd}{sup - -}). The high concentrations of V{sub Cd}{sup - -} and A-centers, along with the deep trap at 0.86 eV and low density of 1.1 eV energy traps, are the major cause of the detectors' low resistivity, and most probably, a major contributor to the low μτ{sub e} product. Our results indicate that the energy levels of point defects in the bandgap, their concentrations, capture cross-sections, and their trapping and de-trapping times play an important role in the detector's performance, especially for devices that rely solely on electron transport.
- OSTI ID:
- 22494913
- Journal Information:
- Journal of Applied Physics, Vol. 119, Issue 2; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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