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Title: Influence of the carrier mobility distribution on the Hall and the Nernst effect measurements in n-type InSb

In this study, we report magneto-resistance measurements on an n-doped InSb film, to separate the contributions of the electrical currents from the heat currents. We have demonstrated a prototype for a magnetic field sensor which is powered by heat currents and does not require any electrical current. We fabricated two Hall bars, where a low frequency (f = 0.05 Hz) AC current, was applied between the two contacts in one of the Hall bars. Separating the f and 2f components of the voltage measured across the second Hall bar was used to distinguish between the electrical and the heat contributions to the electron currents. Our observations can be modeled using a Gaussian distribution of mobility within the sample.
Authors:
; ;  [1] ; ;  [2] ;  [3]
  1. Laboratoire des Solides Irradiés, CNRS UMR 7642, CEA-DSM-IRAMIS, Ecole polytechnique, Université Paris-Saclay, 91128 Palaiseau (France)
  2. Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 (United States)
  3. Department of Physics, Virginia Tech, Blacksburg, Virginia 24061 (United States)
Publication Date:
OSTI Identifier:
22494912
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 119; Journal Issue: 2; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIER MOBILITY; DOPED MATERIALS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; FILMS; GAUSS FUNCTION; HEAT; INDIUM ANTIMONIDES; MAGNETIC FIELDS; MAGNETORESISTANCE; NERNST EFFECT; SENSORS