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Title: Band structure effects on resonant tunneling in III-V quantum wells versus two-dimensional vertical heterostructures

Since the invention of the Esaki diode, resonant tunneling devices have been of interest for applications including multi-valued logic and communication systems. These devices are characterized by the presence of negative differential resistance in the current-voltage characteristic, resulting from lateral momentum conservation during the tunneling process. While a large amount of research has focused on III-V material systems, such as the GaAs/AlGaAs system, for resonant tunneling devices, poor device performance and device-to-device variability have limited widespread adoption. Recently, the symmetric field-effect transistor (symFET) was proposed as a resonant tunneling device incorporating symmetric 2-D materials, such as transition metal dichalcogenides (TMDs), separated by an interlayer barrier, such as hexagonal boron-nitride. The achievable peak-to-valley ratio for TMD symFETs has been predicted to be higher than has been observed for III-V resonant tunneling devices. This work examines the effect that band structure differences between III-V devices and TMDs has on device performance. It is shown that tunneling between the quantized subbands in III-V devices increases the valley current and decreases device performance, while the interlayer barrier height has a negligible impact on performance for barrier heights greater than approximately 0.5‚ÄČeV.
Authors:
 [1] ;  [2] ; ; ;  [1] ;  [3]
  1. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)
  2. (United States)
  3. Electronic Systems Laboratory, Georgia Tech Research Institute, Atlanta, Georgia 30332 (United States)
Publication Date:
OSTI Identifier:
22494898
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 119; Journal Issue: 2; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM ARSENIDES; BORON NITRIDES; DIFFUSION BARRIERS; EQUIPMENT; FIELD EFFECT TRANSISTORS; GALLIUM ARSENIDES; HEIGHT; INVENTIONS; MATERIALS; PEAKS; PERFORMANCE; QUANTUM WELLS; TRANSITION ELEMENTS; TUNNEL EFFECT; TWO-DIMENSIONAL SYSTEMS