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Title: Origins of large light induced voltage in magnetic tunnel junctions grown on semiconductor substrates

Recently, the study of interactions between electron spins and heat currents has given rise to the field of “Spin Caloritronics”. Experimental studies of these interactions have shown a possibility to combine the use of heat and light to power magnetic tunnel junction (MTJ) devices. Here we present a careful study of an MTJ device on Si substrate that can be powered entirely by light. We analyze the influence of the material properties, device geometry, and laser characteristics on the electric response of the sample. We demonstrate that by engineering the MTJ and its electrical contact, a large photovoltage reaching 100 mV can be generated. This voltage originates from the Si substrate and depends on the MTJ magnetic configuration. Finally, we discuss the origin of the photo-voltage in terms of Seebeck and photovoltaic effects.
Authors:
; ; ; ; ; ; ; ; ;  [1]
  1. Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine- BP 70239, F-54506 Vandoeuvre-lès-Nancy Cedex (France)
Publication Date:
OSTI Identifier:
22494888
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 119; Journal Issue: 2; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CONFIGURATION; CURRENTS; ELECTRIC CONTACTS; ELECTRIC POTENTIAL; GEOMETRY; HEAT; LASERS; SEMICONDUCTOR MATERIALS; SPIN; SUBSTRATES; TUNNEL JUNCTIONS; VISIBLE RADIATION