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Title: Electrical, luminescent, and deep trap properties of Si doped n-GaN grown by pendeo epitaxy

Electrical and luminescent properties and deep trap spectra of Si doped GaN films grown by maskless epitaxial lateral overgrowth (MELO) are reported. The dislocation density in the wing region of the structure was 10{sup 6 }cm{sup −2}, while in the seed region it was 10{sup 8 }cm{sup −2}. The major electron traps present had activation energy of 0.56 eV and concentrations in the high 10{sup 15 }cm{sup −3} range. A comparison of diffusion length values and 0.56 eV trap concentration in MELO GaN and epitaxial lateral overgrowth (ELOG) GaN showed a good correlation, suggesting these traps could be effective in carrier recombination. The doped MELO films were more uniform in their electrical properties than either ELOG films or undoped MELO films. We also discuss the differences in deep trap spectra and luminescence spectra of low-dislocation-density MELO, ELOG, and bulk n-GaN samples grown by hydride vapor phase epitaxy. It is suggested that the observed differences could be caused by the differences in oxygen and carbon contamination levels.
Authors:
 [1] ;  [1] ;  [2] ;  [1] ;  [2] ;  [3] ;  [4]
  1. National University of Science and Technology MISiS, Leninskiy pr. 4, Moscow 119049 (Russian Federation)
  2. (Russian Federation)
  3. School of Advanced Materials Engineering and Research Center of Advanced Materials Development, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)
  4. University of Florida, Gainesville, Florida 32611 (United States)
Publication Date:
OSTI Identifier:
22494868
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 119; Journal Issue: 1; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIERS; DIFFUSION LENGTH; DISLOCATIONS; DOPED MATERIALS; ELECTRICAL PROPERTIES; FILMS; GALLIUM NITRIDES; LUMINESCENCE; RECOMBINATION; TRAPS; VAPOR PHASE EPITAXY