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Title: Simultaneous coupling of surface plasmon resonance and photonic bandgap to InGaAs quantum well emission

A photonic bandgap structure was created on the 100 nm thick GaAs barrier layer with Au nanodisks deposited inside the holes. To mitigate the nonradiative surface recombination of GaAs, the Au nanodisks were formed on top of a 15 nm SiO{sub 2} deposited in the holes. A maximum 7.6-fold increase in photoluminescence intensity was obtained at the etch depth of 80 nm. In this configuration, the Au nanodisk is separated from the quantum well by 20 nm of GaAs and 15 nm of SiO{sub 2}. The experimental result was verified by the simulation based on this structure. There was a good agreement between experiments with simulation results.
Authors:
 [1] ;  [2] ;  [2] ;  [3]
  1. Engineering Product Development, Singapore University of Technology and Design, Singapore 487372 (Singapore)
  2. Institute of Materials Research and Engineering, Singapore 117602 (Singapore)
  3. (Singapore)
Publication Date:
OSTI Identifier:
22494848
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 119; Journal Issue: 1; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CONFIGURATION; COUPLING; DEPLETION LAYER; DEPTH; GALLIUM ARSENIDES; HOLES; INDIUM ARSENIDES; PHOTOLUMINESCENCE; QUANTUM WELLS; RECOMBINATION; RESONANCE; SILICON OXIDES; SIMULATION; SURFACES