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Title: Nonpolar resistive memory switching with all four possible resistive switching modes in amorphous LaHoO{sub 3} thin films

We studied the resistive memory switching in pulsed laser deposited amorphous LaHoO{sub 3} (a-LHO) thin films for non-volatile resistive random access memory applications. Nonpolar resistive switching (RS) was achieved in Pt/a-LHO/Pt memory cells with all four possible RS modes (i.e., positive unipolar, positive bipolar, negative unipolar, and negative bipolar) having high R{sub ON}/R{sub OFF} ratios (in the range of ∼10{sup 4}–10{sup 5}) and non-overlapping switching voltages (set voltage, V{sub ON} ∼ ±3.6–4.2 V and reset voltage, V{sub OFF} ∼ ±1.3–1.6 V) with a small variation of about ±5–8%. Temperature dependent current-voltage (I–V) characteristics indicated the metallic conduction in low resistance states (LRS). We believe that the formation (set) and rupture (reset) of mixed conducting filaments formed out of oxygen vacancies and metallic Ho atoms could be responsible for the change in the resistance states of the memory cell. Detailed analysis of I–V characteristics further corroborated the formation of conductive nanofilaments based on metal-like (Ohmic) conduction in LRS. Simmons-Schottky emission was found to be the dominant charge transport mechanism in the high resistance state.
Authors:
; ;  [1] ;  [2] ;  [3]
  1. Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, San Juan, Puerto Rico 00936-8377 (United States)
  2. General Studies College, University of Puerto Rico, San Juan, Puerto Rico 00931 (United States)
  3. Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge CB0 3HE (United Kingdom)
Publication Date:
OSTI Identifier:
22494836
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; AMORPHOUS STATE; CHARGE TRANSPORT; DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; HOLMIUM; HOLMIUM OXIDES; LANTHANUM COMPOUNDS; LASER RADIATION; NANOSTRUCTURES; OXYGEN; PULSED IRRADIATION; TEMPERATURE DEPENDENCE; THIN FILMS; VACANCIES