Visible-blind ultraviolet photodiode fabricated by UV oxidation of metallic zinc on p-Si

Zhang, Dongyuan; Uchida, Kazuo; Nozaki, Shinji

doi:10.1063/1.4929961

Title: Visible-blind ultraviolet photodiode fabricated by UV oxidation of metallic zinc on p-Si

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Abstract

A UV photodiode fabricated by the UV oxidation of a metallic zinc thin film on p-Si has manifested unique photoresponse characteristics. The electron concentration found by the Hall measurement was 3 × 10{sup 16 }cm{sup −3}, and such a low electron concentration resulted in a low visible photoluminescence. UV illumination enhances the oxidation at low temperatures and decreases the concentration of the oxygen vacancies. The I-V characteristic showed a good rectification with a four-order magnitude difference in the forward and reverse currents at 2 V, and its linear and frequency independent C{sup −2}–V characteristic confirmed an abrupt pn junction. The photoresponse showed a visible blindness with a responsivity ratio of UV and visible light as high as 100. Such a visible-blind photoresponse was attributed to the optimum thickness of the SiO{sub 2} formed on the Si surface during the UV oxidation at 400 °C. A lower potential barrier to holes at the ZnO/SiO{sub 2} interface facilitates Fowler-Nordheim tunneling of the photo-generated holes during the UV illumination, while a higher potential barrier to electrons efficiently blocks transport of the photo-generated electrons to the ZnO during the visible light illumination. The presence of oxide resulted in a slow photoresponse to the turn-on and off of the UVmore »« less

Authors:

Zhang, Dongyuan; Uchida, Kazuo; Nozaki, Shinji ^[1]

Graduate School of Informatics and Engineering, The University of Electro-Communications, Chofu-shi, Tokyo 182-8585 (Japan)

Publication Date:: Mon Sep 07 00:00:00 EDT 2015

OSTI Identifier:: 22494833

Resource Type:: Journal Article

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 118; Journal Issue: 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979

Country of Publication:: United States

Language:: English

Subject:: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABUNDANCE; CARRIERS; CURRENTS; ELECTRONS; HALL EFFECT; HOLES; OXIDATION; OXYGEN; PHOTOCONDUCTIVITY; PHOTOLUMINESCENCE; P-N JUNCTIONS; POTENTIALS; SILICON OXIDES; TEMPERATURE RANGE 0065-0273 K; THIN FILMS; TUNNEL EFFECT; ULTRAVIOLET RADIATION; VACANCIES; ZINC; ZINC OXIDES

Citation Formats


                    Zhang, Dongyuan, Uchida, Kazuo, and Nozaki, Shinji. Visible-blind ultraviolet photodiode fabricated by UV oxidation of metallic zinc on p-Si.  United States: N. p., 2015. 
        Web.  doi:10.1063/1.4929961.

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                    Zhang, Dongyuan, Uchida, Kazuo, & Nozaki, Shinji. Visible-blind ultraviolet photodiode fabricated by UV oxidation of metallic zinc on p-Si.  United States.  https://doi.org/10.1063/1.4929961

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                    Zhang, Dongyuan, Uchida, Kazuo, and Nozaki, Shinji. 2015.  
        "Visible-blind ultraviolet photodiode fabricated by UV oxidation of metallic zinc on p-Si".  United States.  https://doi.org/10.1063/1.4929961.

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@article{osti_22494833,

  title        = {Visible-blind ultraviolet photodiode fabricated by UV oxidation of metallic zinc on p-Si},

  author       = {Zhang, Dongyuan and Uchida, Kazuo and Nozaki, Shinji},

  abstractNote = {A UV photodiode fabricated by the UV oxidation of a metallic zinc thin film on p-Si has manifested unique photoresponse characteristics. The electron concentration found by the Hall measurement was 3 × 10{sup 16 }cm{sup −3}, and such a low electron concentration resulted in a low visible photoluminescence. UV illumination enhances the oxidation at low temperatures and decreases the concentration of the oxygen vacancies. The I-V characteristic showed a good rectification with a four-order magnitude difference in the forward and reverse currents at 2 V, and its linear and frequency independent C{sup −2}–V characteristic confirmed an abrupt pn junction. The photoresponse showed a visible blindness with a responsivity ratio of UV and visible light as high as 100. Such a visible-blind photoresponse was attributed to the optimum thickness of the SiO{sub 2} formed on the Si surface during the UV oxidation at 400 °C. A lower potential barrier to holes at the ZnO/SiO{sub 2} interface facilitates Fowler-Nordheim tunneling of the photo-generated holes during the UV illumination, while a higher potential barrier to electrons efficiently blocks transport of the photo-generated electrons to the ZnO during the visible light illumination. The presence of oxide resulted in a slow photoresponse to the turn-on and off of the UV light. A detailed analysis is presented to understand how the photo-generated carriers contribute step by step to the photocurrent. In addition to the slow photoresponse associated with the SiO{sub 2} interfacial layer, the decay of the photocurrent was found extremely slow after turn-off of the UV light. Such a slow decay of the photocurrent is referred to as a persistent photoconductivity, which is caused by metastable deep levels. It is hypothesized that Zn vacancies form such a deep level, and that the photo-generated electrons need to overcome a thermal-energy barrier for capture. The ZnO film by the UV oxidation at 400 °C was found to be rich in oxygen and deficient in zinc.},

  doi          = {10.1063/1.4929961},

  url          = {https://www.osti.gov/biblio/22494833},
  journal      = {Journal of Applied Physics},

  issn         = {0021-8979},

  number       = 9,

  volume       = 118,

  place        = {United States},

  year         = {Mon Sep 07 00:00:00 EDT 2015},

  month        = {Mon Sep 07 00:00:00 EDT 2015}

}

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