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Title: Performance optimization of p-n homojunction nanowire-based piezoelectric nanogenerators through control of doping concentration

This paper demonstrates a series of flexible transparent ZnO p-n homojunction nanowire-based piezoelectric nanogenerators (NGs) with different p-doping concentrations. The lithium-doped segments are grown directly and consecutively on top of intrinsic nanowires (n-type). When characterized under cyclic compressive strains, the overall NG performance is enhanced by up to eleven-fold if the doping concentration is properly controlled. This improvement is attributable to reduction in the mobile charge screening effect and optimization of the NGs' internal electrical characteristics. Experimental results also show that an interfacial MoO{sub 3} barrier layer, at an optimized thickness of 5–10 nm, reduces leakage current and substantially improves piezoelectric NG performance.
Authors:
;  [1] ;  [2]
  1. Department of Electrical and Computer Engineering, Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada)
  2. Department of System Design Engineering, Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada)
Publication Date:
OSTI Identifier:
22494830
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABUNDANCE; CARRIER MOBILITY; DEPLETION LAYER; DOPED MATERIALS; LEAKAGE CURRENT; LITHIUM; MOLYBDENUM OXIDES; NANOWIRES; OPTIMIZATION; PIEZOELECTRICITY; P-N JUNCTIONS; STRAINS; ZINC OXIDES