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Title: Erratum: “Injection current dependences of electroluminescence transition energy in InGaN/GaN multiple quantum wells light emitting diodes under pulsed current conditions” [J. Appl. Phys. 118, 033101 (2015)]

No abstract prepared.
Authors:
; ; ;  [1] ;  [2] ; ;  [1] ;  [2] ;  [3] ;  [4]
  1. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China)
  2. (CAS), Suzhou 215123 (China)
  3. (CAS), Beijing 100083 (China)
  4. Institute of Semiconductors (CAS), Beijing 100083 (China)
Publication Date:
OSTI Identifier:
22494816
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CORRECTIONS; ELECTRIC CURRENTS; ELECTROLUMINESCENCE; GALLIUM NITRIDES; LIGHT EMITTING DIODES; PULSES; QUANTUM WELLS