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Title: Improvement on electrical conductivity and electron field emission properties of Au-ion implanted ultrananocrystalline diamond films by using Au-Si eutectic substrates

In the present work, Au-Si eutectic layer was used to enhance the electrical conductivity/electron field emission (EFE) properties of Au-ion implanted ultrananocrystalline diamond (Au-UNCD) films grown on Si substrates. The electrical conductivity was improved to a value of 230 (Ω cm){sup −1}, and the EFE properties was enhanced reporting a low turn-on field of 2.1 V/μm with high EFE current density of 5.3 mA/cm{sup 2} (at an applied field of 4.9 V/μm) for the Au-UNCD films. The formation of SiC phase circumvents the formation of amorphous carbon prior to the nucleation of diamond on Si substrates. Consequently, the electron transport efficiency of the UNCD-to-Si interface increases, thereby improving the conductivity as well as the EFE properties. Moreover, the salient feature of these processes is that the sputtering deposition of Au-coating for preparing the Au-Si interlayer, the microwave plasma enhanced chemical vapor deposition process for growing the UNCD films, and the Au-ion implantation process for inducing the nanographitic phases are standard thin film preparation techniques, which are simple, robust, and easily scalable. The availability of these highly conducting UNCD films with superior EFE characteristics may open up a pathway for the development of high-definition flat panel displays and plasma devices.
Authors:
 [1] ;  [2] ;  [3] ;  [1] ;  [4]
  1. Department of Materials Science and Engineering, National Tsing Hua University, Hsin-Chu Taiwan 300, Taiwan (China)
  2. (IMO), Hasselt University, 3590 Diepenbeek (Belgium)
  3. Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102 (India)
  4. Department of Physics, Tamkang University, Tamsui, Taiwan 251, Taiwan (China)
Publication Date:
OSTI Identifier:
22494806
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CHEMICAL VAPOR DEPOSITION; CRYSTALS; CURRENT DENSITY; DIAMONDS; ELECTRIC CONDUCTIVITY; ELECTRON TRANSFER; ELECTRONS; EUTECTICS; FIELD EMISSION; GOLD IONS; MICROWAVE RADIATION; NANOSTRUCTURES; NUCLEATION; SILICON; SILICON CARBIDES; SPUTTERING; SUBSTRATES; THIN FILMS