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Title: Electronic structure evolution in doping of fullerene (C{sub 60}) by ultra-thin layer molybdenum trioxide

Ultra-thin layer molybdenum oxide doping of fullerene has been investigated using ultraviolet photoemission spectroscopy (UPS) and X-ray photoemission spectroscopy (XPS). The highest occupied molecular orbital (HOMO) can be observed directly with UPS. It is observed that the Fermi level position in fullerene is modified by ultra-thin-layer molybdenum oxide doping, and the HOMO onset is shifted to less than 1.3‚ÄČeV below the Fermi level. The XPS results indicate that charge transfer was observed from the C{sub 60} to MoO{sub x} and Mo{sup 6+} oxides is the basis as hole dopants.
Authors:
; ;  [1] ;  [2] ;  [1] ;  [3]
  1. Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627 (United States)
  2. Institute for Super-microstructure and Ultrafast Process in Advanced Materials (ISUPAM), Central South University, Changsha, Hunan 410083 (China)
  3. (ISUPAM), Central South University, Changsha, Hunan 410083 (China)
Publication Date:
OSTI Identifier:
22494804
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DOPED MATERIALS; ELECTRONIC STRUCTURE; FERMI LEVEL; FULLERENES; HOLES; MOLECULAR ORBITAL METHOD; MOLYBDENUM IONS; MOLYBDENUM OXIDES; THIN FILMS; ULTRAVIOLET RADIATION; X RADIATION; X-RAY PHOTOELECTRON SPECTROSCOPY