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Title: Anisotropy of heat conduction in Mo/Si multilayers

This paper reports on the studies of anisotropic heat conduction phenomena in Mo/Si multilayers with individual layer thicknesses selected to be smaller than the mean free path of heat carriers. We applied the frequency-domain thermoreflectance technique to characterize the thermal conductivity tensor. While the mechanisms of the cross-plane heat conduction were studied in detail previously, here we focus on the in-plane heat conduction. To analyze the relative contribution of electron transport to the in-plane heat conduction, we applied sheet-resistance measurements. Results of Mo/Si multilayers with variable thickness of the Mo layers indicate that the net in-plane thermal conductivity depends on the microstructure of the Mo layers.
Authors:
; ; ;  [1] ; ;  [2] ;  [3]
  1. MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands)
  2. Department of Mechanical Engineering, Boston University, Boston, Massachusetts 02215 (United States)
  3. FOM Institute DIFFER, Eindhoven (Netherlands)
Publication Date:
OSTI Identifier:
22494799
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANISOTROPY; CARRIERS; ELECTRON TRANSFER; LAYERS; MEAN FREE PATH; MICROSTRUCTURE; MOLYBDENUM; SILICON; THERMAL CONDUCTION; THERMAL CONDUCTIVITY; THICKNESS