Anisotropy of heat conduction in Mo/Si multilayers

Journal Article · Fri Aug 28 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4928958· OSTI ID:22494799

Medvedev, V. V.; Yakshin, A. E.; Bijkerk, F. ^[1]; Yang, J.; Schmidt, A. J. ^[2]; Zoethout, E. ^[3]

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1. MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands)
2. Department of Mechanical Engineering, Boston University, Boston, Massachusetts 02215 (United States)
3. FOM Institute DIFFER, Eindhoven (Netherlands)

This paper reports on the studies of anisotropic heat conduction phenomena in Mo/Si multilayers with individual layer thicknesses selected to be smaller than the mean free path of heat carriers. We applied the frequency-domain thermoreflectance technique to characterize the thermal conductivity tensor. While the mechanisms of the cross-plane heat conduction were studied in detail previously, here we focus on the in-plane heat conduction. To analyze the relative contribution of electron transport to the in-plane heat conduction, we applied sheet-resistance measurements. Results of Mo/Si multilayers with variable thickness of the Mo layers indicate that the net in-plane thermal conductivity depends on the microstructure of the Mo layers.

• OSTI ID: 22494799
• Journal Information: Journal of Applied Physics, Vol. 118, Issue 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ANISOTROPY
CARRIERS
ELECTRON TRANSFER
LAYERS
MEAN FREE PATH
MICROSTRUCTURE
MOLYBDENUM
SILICON
THERMAL CONDUCTION
THERMAL CONDUCTIVITY
THICKNESS