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Title: Growth condition dependence of photoluminescence polarization in (100) GaAs/AlGaAs quantum wells at room temperature

We conducted systematic measurements on the carrier lifetime (τ{sub c}), spin relaxation time (τ{sub s}), and circular polarization of photoluminescence (P{sub circ}) in (100) GaAs/AlGaAs multiple quantum wells grown by molecular beam epitaxy (MBE). The τ{sub c} values are strongly affected by MBE growth conditions (0.4–9 ns), whereas the τ{sub s} are almost constant at about 0.13 ns. The result suggests that spin detection efficiency [τ{sub s}/(τ{sub c} + τ{sub s})], which is expected to be proportional to a steady-state P{sub circ}, is largely dependent on growth condition. We confirmed that the P{sub circ} has similar dependence on growth condition to those of τ{sub s}/(τ{sub c} + τ{sub s}) values. The study thus indicates that choosing the appropriate growth condition of the QW is indispensable for obtaining a high P{sub circ} from a spin-polarized light-emitting diode (spin-LED)
Authors:
; ;  [1] ; ;  [2]
  1. Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Central 2, Tsukuba, Ibaraki 305-8568 (Japan)
  2. Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571 (Japan)
Publication Date:
OSTI Identifier:
22494788
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ACCURACY; ALUMINIUM ARSENIDES; CARRIER LIFETIME; CRYSTAL GROWTH; GALLIUM ARSENIDES; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; POLARIZATION; QUANTUM WELLS; RELAXATION TIME; SPIN ORIENTATION; SPIN-SPIN RELAXATION; STEADY-STATE CONDITIONS; TEMPERATURE RANGE 0273-0400 K