skip to main content

Title: Efficient far-infrared thermal bremsstrahlung radiation from a heterojunction bipolar transistor

We investigate the far-infrared thermal radiation properties of a heterojunction bipolar transistor. The device conveniently provides a high electric field for electrons to heat the lattice and the electron gas in a background with ions embedded. Because of very high effective temperature of the electron gas in the collector, the electron-ion bremsstrahlung makes efficient the thermal radiation in the far-infrared region. The transistor can yield a radiation power of 0.1 mW with the spectral region between 2 and 75 THz and a power conversion efficiency of 6 × 10{sup −4}. Such output contains a power of 20 μW in the low-frequency part (2–20 THz) of the spectrum.
Authors:
;  [1]
  1. Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu, Taiwan (China)
Publication Date:
OSTI Identifier:
22494783
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BREMSSTRAHLUNG; ELECTRIC FIELDS; ELECTRON GAS; ELECTRONS; ENERGY CONVERSION; ENERGY EFFICIENCY; FAR INFRARED RADIATION; HETEROJUNCTIONS; IONS; THERMAL RADIATION; THZ RANGE; TRANSISTORS