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Title: Epitaxial lift-off for solid-state cavity quantum electrodynamics

We demonstrate an approach to incorporate self-assembled quantum dots into a Fabry-Pérot-like microcavity. Thereby, a 3λ/4 GaAs layer containing quantum dots is epitaxially removed and attached by van der Waals bonding to one of the microcavity mirrors. We reach a finesse as high as 4100 with this configuration limited by the reflectivity of the dielectric mirrors and not by scattering at the semiconductor-mirror interface, demonstrating that the epitaxial lift-off procedure is a promising procedure for cavity quantum electrodynamics in the solid state. As a first step in this direction, we demonstrate a clear cavity-quantum dot interaction in the weak coupling regime with a Purcell factor in the order of 3. Estimations of the coupling strength via the Purcell factor suggest that we are close to the strong coupling regime.
Authors:
; ; ; ;  [1] ; ; ;  [2]
  1. Department of Physics, University of Basel, Klingelbergstrasse 82, Basel 4056 (Switzerland)
  2. Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, D-44780 Bochum (Germany)
Publication Date:
OSTI Identifier:
22494777
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 7; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DIELECTRIC MATERIALS; EPITAXY; FABRY-PEROT INTERFEROMETER; GALLIUM ARSENIDES; QUANTUM DOTS; QUANTUM ELECTRODYNAMICS; SEMICONDUCTOR MATERIALS; STRONG-COUPLING MODEL; VAN DER WAALS FORCES; WEAK-COUPLING MODEL