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Title: Influence of internal electric fields on band gaps in short period GaN/GaAlN and InGaN/GaN polar superlattices

The electronic structures of short period mGaN/nGa{sub y}Al{sub 1āˆ’y}N and mIn{sub y}Ga{sub 1-y}N/nGaN superlattices grown along the wurtzite c axis have been calculated for different alloy compositions y and various small numbers m of well- and n of barrier-monolayers. The general trends in gap behavior can, to a large extent, be related to the strength of the internal electric field, E, in the GaN and InGaN quantum wells. In the GaN/GaAlN superlattices, E reaches 4 MV/cm, while in the InGaN/GaN superlattices, values as high as Eā€‰ā‰ˆā€‰6.5 MV/cm are found. The strong electric fields are caused by spontaneous and piezoelectric polarizations, the latter contribution dominating in InGaN/GaN superlattices. The influence of different arrangements of In atoms (indium clustering) on the band gap values in InGaN/GaN superlattices is examined.
Authors:
; ;  [1] ; ;  [2]
  1. Institute of High Pressures Physics, UNIPRESS, 01-142 Warsaw (Poland)
  2. Department of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C (Denmark)
Publication Date:
OSTI Identifier:
22494774
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 7; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALLOYS; ALUMINIUM NITRIDES; ATOMIC CLUSTERS; ELECTRIC FIELDS; ELECTRONIC STRUCTURE; GALLIUM NITRIDES; INDIUM; INDIUM NITRIDES; PIEZOELECTRICITY; POLARIZATION; QUANTUM WELLS; SUPERLATTICES