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Title: Influence of internal electric fields on band gaps in short period GaN/GaAlN and InGaN/GaN polar superlattices

Abstract

The electronic structures of short period mGaN/nGa{sub y}Al{sub 1−y}N and mIn{sub y}Ga{sub 1-y}N/nGaN superlattices grown along the wurtzite c axis have been calculated for different alloy compositions y and various small numbers m of well- and n of barrier-monolayers. The general trends in gap behavior can, to a large extent, be related to the strength of the internal electric field, E, in the GaN and InGaN quantum wells. In the GaN/GaAlN superlattices, E reaches 4 MV/cm, while in the InGaN/GaN superlattices, values as high as E ≈ 6.5 MV/cm are found. The strong electric fields are caused by spontaneous and piezoelectric polarizations, the latter contribution dominating in InGaN/GaN superlattices. The influence of different arrangements of In atoms (indium clustering) on the band gap values in InGaN/GaN superlattices is examined.

Authors:
;  [1]; ;  [2]
  1. Institute of High Pressures Physics, UNIPRESS, 01-142 Warsaw (Poland)
  2. Department of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C (Denmark)
Publication Date:
OSTI Identifier:
22494774
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 118; Journal Issue: 7; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALLOYS; ALUMINIUM NITRIDES; ATOMIC CLUSTERS; ELECTRIC FIELDS; ELECTRONIC STRUCTURE; GALLIUM NITRIDES; INDIUM; INDIUM NITRIDES; PIEZOELECTRICITY; POLARIZATION; QUANTUM WELLS; SUPERLATTICES

Citation Formats

Gorczyca, I., E-mail: iza@unipress.waw.pl, Skrobas, K., Suski, T., Christensen, N. E., and Svane, A. Influence of internal electric fields on band gaps in short period GaN/GaAlN and InGaN/GaN polar superlattices. United States: N. p., 2015. Web. doi:10.1063/1.4928613.
Gorczyca, I., E-mail: iza@unipress.waw.pl, Skrobas, K., Suski, T., Christensen, N. E., & Svane, A. Influence of internal electric fields on band gaps in short period GaN/GaAlN and InGaN/GaN polar superlattices. United States. https://doi.org/10.1063/1.4928613
Gorczyca, I., E-mail: iza@unipress.waw.pl, Skrobas, K., Suski, T., Christensen, N. E., and Svane, A. 2015. "Influence of internal electric fields on band gaps in short period GaN/GaAlN and InGaN/GaN polar superlattices". United States. https://doi.org/10.1063/1.4928613.
@article{osti_22494774,
title = {Influence of internal electric fields on band gaps in short period GaN/GaAlN and InGaN/GaN polar superlattices},
author = {Gorczyca, I., E-mail: iza@unipress.waw.pl and Skrobas, K. and Suski, T. and Christensen, N. E. and Svane, A.},
abstractNote = {The electronic structures of short period mGaN/nGa{sub y}Al{sub 1−y}N and mIn{sub y}Ga{sub 1-y}N/nGaN superlattices grown along the wurtzite c axis have been calculated for different alloy compositions y and various small numbers m of well- and n of barrier-monolayers. The general trends in gap behavior can, to a large extent, be related to the strength of the internal electric field, E, in the GaN and InGaN quantum wells. In the GaN/GaAlN superlattices, E reaches 4 MV/cm, while in the InGaN/GaN superlattices, values as high as E ≈ 6.5 MV/cm are found. The strong electric fields are caused by spontaneous and piezoelectric polarizations, the latter contribution dominating in InGaN/GaN superlattices. The influence of different arrangements of In atoms (indium clustering) on the band gap values in InGaN/GaN superlattices is examined.},
doi = {10.1063/1.4928613},
url = {https://www.osti.gov/biblio/22494774}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 7,
volume = 118,
place = {United States},
year = {Fri Aug 21 00:00:00 EDT 2015},
month = {Fri Aug 21 00:00:00 EDT 2015}
}