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Title: Heterointegration of InGaAs/GaAs quantum wells on micro-patterned Si substrates

InGaAs/GaAs quantum wells (QWs) grown on μ-patterned Ge/Si substrates by metal organic vapor phase epitaxy are investigated by electron microscopy and spatially resolved photoluminescence (PL) spectroscopy. The lattice parameter mismatch of GaAs and Si is overcome by a Ge buffer layer grown by low-energy plasma enhanced chemical vapor deposition. The GaAs crystals form truncated pyramids whose shape is strongly affected by the geometry of the underlying pattern consisting of 8 μm deep and 3–50 μm wide square Si pillars. Comparing the measured PL energies with calculations performed in the effective mass approximation reveals that the QW emission energies are significantly influenced by the GaAs morphology. It is shown that the geometry favors indium diffusion during growth from the inclined facets towards the top (001) facet. The Si pillar-size dependent release of thermally induced strain observed in the PL measurements is confirmed by X-ray diffraction.
Authors:
; ; ; ;  [1] ;  [1] ;  [2] ;  [3] ;  [4]
  1. Laboratory for Solid State Physics, ETH Zürich, Otto-Stern-Weg 1, CH-8093 Zürich (Switzerland)
  2. (Italy)
  3. L-NESS, Department of Physics, Politecnico di Milano, via Anzani 42, I-22100 Como (Italy)
  4. Scientific Center for Optical and Electron Microscopy (ScopeM), ETH Zürich, Auguste-Piccard-Hof 1, CH-8093 Zürich (Switzerland)
Publication Date:
OSTI Identifier:
22494773
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 7; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CHEMICAL VAPOR DEPOSITION; CRYSTALS; DIFFUSION; EFFECTIVE MASS; ELECTRON MICROSCOPY; GALLIUM ARSENIDES; GERMANIUM; INDIUM; INDIUM ARSENIDES; LATTICE PARAMETERS; MORPHOLOGY; ORGANOMETALLIC COMPOUNDS; PHOTOLUMINESCENCE; PLASMA; QUANTUM WELLS; SILICON; SPECTROSCOPY; STRAINS; VAPOR PHASE EPITAXY; X-RAY DIFFRACTION