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Title: Direct observation of conductive filament formation in Alq3 based organic resistive memories

This work explores resistive switching mechanisms in non-volatile organic memory devices based on tris(8-hydroxyquinolie)aluminum (Alq{sub 3}). Advanced characterization tools are applied to investigate metal diffusion in ITO/Alq{sub 3}/Ag memory device stacks leading to conductive filament formation. The morphology of Alq{sub 3}/Ag layers as a function of the metal evaporation conditions is studied by X-ray reflectivity, while depth profile analysis with X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry is applied to characterize operational memory elements displaying reliable bistable current-voltage characteristics. 3D images of the distribution of silver inside the organic layer clearly point towards the existence of conductive filaments and allow for the identification of the initial filament formation and inactivation mechanisms during switching of the device. Initial filament formation is suggested to be driven by field assisted diffusion of silver from abundant structures formed during the top electrode evaporation, whereas thermochemical effects lead to local filament inactivation.
Authors:
;  [1] ; ;  [2] ;  [2] ;  [3] ; ; ;  [4]
  1. Research Center in the Physics of Matter and Radiation (PMR), Laboratoire Interdisciplinaire de Spectroscopie Electronique (LISE), University of Namur, B-5000 Namur (Belgium)
  2. NanoTecCenter Weiz Forschungsgesellschaft mbH, Franz-Pichler Straße 32, A-8160 Weiz (Austria)
  3. (Austria)
  4. Institute of Applied Physics, Eberhard-Karls-Universität Tübingen, D-72076 Tübingen (Germany)
Publication Date:
OSTI Identifier:
22494772
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 7; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 36 MATERIALS SCIENCE; ALUMINIUM COMPOUNDS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRODES; EVAPORATION; FILAMENTS; IMAGES; INACTIVATION; LAYERS; MASS SPECTROSCOPY; MEMORY DEVICES; MORPHOLOGY; OXINE; REFLECTIVITY; SILVER; TIME-OF-FLIGHT METHOD; X RADIATION; X-RAY PHOTOELECTRON SPECTROSCOPY