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Title: Deep traps and photo-electric properties of p-Si/MgO/n-Zn{sub 1−x}Mg{sub x}O heterojunction

In the paper, the photoluminescence (PL) measurements, current–voltage–temperature (I-V-T) measurements, space charge techniques (C-V and deep level transient spectroscopy (DLTS)), and photocurrent spectral characteristics have been applied to investigate defects in p-Si/MgO/ n-Zn{sub 1−x}Mg{sub x}O heterojunction (HJ). The HJ structure was grown on p-type Si (111) substrate with resistivity equal to 0.1 Ω cm by the plasma-assisted molecular beam epitaxy technique. A radio-frequency cell was used for the generation of oxygen plasma. PL spectrum let us determine the Mg content ∼10%. Besides the excitonic Zn{sub 0.9}Mg{sub 0.1}O line, the PL spectrum also contains green and yellow emission bands indicating the presence of defect states in the investigated structures. I-V measurements reveal the rectifying properties of the HJ and the current thermally activated with a trap with the activation energy equal to 0.42 eV. DLTS studies yield the majority trap of the activation energy 0.42 eV, confirming the result obtained from the I-V measurements. It was found that the defects related to this trap have a point like behaviour. A spectral characteristic of the photocurrent shows that the p-Si/MgO/n-Zn{sub 1−x}Mg{sub x}O HJ may be applied as a photodiode operating within the wavelength range of 300 nm-1100 nm. The dark current transport and photocurrent spectrum weremore » explained using the Anderson model of a HJ.« less
Authors:
; ; ;  [1] ; ;  [2]
  1. Faculty of Fundamental Problems of Technology, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland)
  2. Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warsaw (Poland)
Publication Date:
OSTI Identifier:
22494765
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 7; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ACTIVATION ENERGY; CURRENTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; ELECTRIC POTENTIAL; ELECTRICAL PROPERTIES; EV RANGE; HETEROJUNCTIONS; MAGNESIUM OXIDES; MOLECULAR BEAM EPITAXY; OXYGEN; PHOTOLUMINESCENCE; PLASMA; RADIOWAVE RADIATION; SILICON; SPACE CHARGE; SPECTRA; WAVELENGTHS