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Title: Defect engineered d{sup 0} ferromagnetism in tin-doped indium oxide nanostructures and nanocrystalline thin-films

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4928952· OSTI ID:22494764
 [1];  [2]; ;  [3];  [4]; ;  [5]
  1. Centre for Research in Nanoscience and Nanotechnology, University of Calcutta, Technology Campus, Block JD-2, Sector III, Salt Lake City, Kolkata 700 098 (India)
  2. Department of Physics, Bejoy Narayan Mahavidyalaya, P.O. Itachuna, Hooghly 712 147 (India)
  3. Department of Physical Sciences, Indian Institute of Science Education and Research, Kolkata, Mohanpur Campus, BCKV Campus Main Office, Nadia 741 252 (India)
  4. Materials Characterization Division, CSIR-Central Glass and Ceramic Research Institute, 2A & 2B Raja S. C. Mullick Road, Jadavpur, Kolkata 700 032 (India)
  5. Department of Material Science, Indian Association for the Cultivation of Science, 2A & 2B Raja S. C. Mullick Road, Jadavpur, Kolkata 700 032 (India)

Origin of unexpected defect engineered room-temperature ferromagnetism observed in tin-doped indium oxide (ITO) nanostructures (Nanowires, Nano-combs) and nanocrystalline thin films fabricated by pulsed laser deposition has been investigated. It is found that the ITO nanostructures prepared under argon environment exhibit strongest ferromagnetic signature as compared to that nanocrystalline thin films grown at oxygen. The evidence of singly ionized oxygen vacancy (V{sub 0}{sup +}) defects, obtained from various spectroscopic measurements, suggests that such V{sub 0}{sup +} defects are mainly responsible for the intrinsic ferromagnetic ordering. The exchange interaction of the defects provides extensive opportunity to tune the room-temperature d{sup 0} ferromagnetism and optical properties of ITOs.

OSTI ID:
22494764
Journal Information:
Journal of Applied Physics, Vol. 118, Issue 7; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English