Photoluminescence study of p-type vs. n-type Ag-doped ZnO films
- Department of Electrical and Computer Engineering, Texas A&M University, College Station, Texas 77843-3128 (United States)
- Department of Physics, Chemistry and Biology, Linkoping University, 583 81 Linkoping (Sweden)
- Department of Materials Science and Engineering, Texas A&M University, College Station, Texas 77843-3003 (United States)
Silver doped ZnO films have been grown on sapphire (0001) substrates by pulsed laser deposition. Hall measurements indicate that p-type conductivity is realized for the films deposited at 500 °C and 750 °C. Transmission electron microscopy images show more obvious and higher density of stacking faults (SFs) present in the p-type ZnO films as compared to the n-type films. Top view and cross sectional photoluminescence of the n- and p-type samples revealed free excitonic emission from both films. A peak at 3.314 eV, attributed to SF emission, has been observed only for the n-type sample, while a weak neutral acceptor peak observed at 3.359 eV in the p-type film. The SF emission in the n-type sample suggests localization of acceptor impurities nearby the SFs, while lack of SF emission for the p-type sample indicates the activation of the Ag acceptors in ZnO.
- OSTI ID:
- 22494739
- Journal Information:
- Journal of Applied Physics, Vol. 118, Issue 6; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
DOPED MATERIALS
ENERGY BEAM DEPOSITION
EV RANGE
HALL EFFECT
IMAGES
IMPURITIES
LASER RADIATION
N-TYPE CONDUCTORS
PHOTOLUMINESCENCE
P-TYPE CONDUCTORS
PULSED IRRADIATION
SAPPHIRE
SILVER
STACKING FAULTS
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
ZINC OXIDES