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Title: Compositional dependence of the band gap in Ga(NAsP) quantum well heterostructures

We present experimental and theoretical studies of the composition dependence of the direct band gap energy in Ga(NAsP)/GaP quantum well heterostructures grown on either (001) GaP- or Si-substrates. The theoretical description takes into account the band anti-crossing model for the conduction band as well as the modification of the valence subband structure due to the strain resulting from the pseudomorphic epitaxial growth on the respective substrate. The composition dependence of the direct band gap of Ga(NAsP) is obtained for a wide range of nitrogen and phosphorus contents relevant for laser applications on Si-substrate.
Authors:
; ; ; ; ; ; ; ; ;  [1]
  1. Materials Science Center and Faculty of Physics, Philipps-University Marburg, Marburg (Germany)
Publication Date:
OSTI Identifier:
22494738
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 6; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; GALLIUM PHOSPHIDES; LASERS; NITROGEN; PHOSPHORUS; QUANTUM WELLS; SILICON; STRAINS; SUBSTRATES; VALENCE