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Title: Two different carbon-hydrogen complexes in silicon with closely spaced energy levels

An acceptor and a single donor state of carbon-hydrogen defects (CH{sub A} and CH{sub B}) are observed by Laplace deep level transient spectroscopy at 90 K. CH{sub A} appears directly after hydrogenation by wet chemical etching or hydrogen plasma treatment, whereas CH{sub B} can be observed only after a successive annealing under reverse bias at about 320 K. The activation enthalpies of these states are 0.16 eV for CH{sub A} and 0.14 eV for CH{sub B}. Our results reconcile previous controversial experimental results. We attribute CH{sub A} to the configuration where substitutional carbon binds a hydrogen atom on a bond centered position between carbon and the neighboring silicon and CH{sub B} to another carbon-hydrogen defect.
Authors:
; ;  [1]
  1. Technische Universität Dresden, Institut für Angewandte Physik, 01062 Dresden (Germany)
Publication Date:
OSTI Identifier:
22494714
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; CARBON; CARBON COMPLEXES; DEFECTS; ENERGY LEVELS; ENTHALPY; ETCHING; EV RANGE; HYDROGEN; HYDROGEN COMPLEXES; HYDROGENATION; PLASMA; SILICON