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Title: Two different carbon-hydrogen complexes in silicon with closely spaced energy levels

Abstract

An acceptor and a single donor state of carbon-hydrogen defects (CH{sub A} and CH{sub B}) are observed by Laplace deep level transient spectroscopy at 90 K. CH{sub A} appears directly after hydrogenation by wet chemical etching or hydrogen plasma treatment, whereas CH{sub B} can be observed only after a successive annealing under reverse bias at about 320 K. The activation enthalpies of these states are 0.16 eV for CH{sub A} and 0.14 eV for CH{sub B}. Our results reconcile previous controversial experimental results. We attribute CH{sub A} to the configuration where substitutional carbon binds a hydrogen atom on a bond centered position between carbon and the neighboring silicon and CH{sub B} to another carbon-hydrogen defect.

Authors:
 [1]
  1. Technische Universität Dresden, Institut für Angewandte Physik, 01062 Dresden (Germany)
Publication Date:
OSTI Identifier:
22494714
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 118; Journal Issue: 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; CARBON; CARBON COMPLEXES; DEFECTS; ENERGY LEVELS; ENTHALPY; ETCHING; EV RANGE; HYDROGEN; HYDROGEN COMPLEXES; HYDROGENATION; PLASMA; SILICON

Citation Formats

Stübner, R., E-mail: ronald.stuebner@physik.tu-dresden.de, E-mail: kolkov@ifpan.edu.pl, Kolkovsky, Vl., E-mail: ronald.stuebner@physik.tu-dresden.de, E-mail: kolkov@ifpan.edu.pl, and Weber, J. Two different carbon-hydrogen complexes in silicon with closely spaced energy levels. United States: N. p., 2015. Web. doi:10.1063/1.4928146.
Stübner, R., E-mail: ronald.stuebner@physik.tu-dresden.de, E-mail: kolkov@ifpan.edu.pl, Kolkovsky, Vl., E-mail: ronald.stuebner@physik.tu-dresden.de, E-mail: kolkov@ifpan.edu.pl, & Weber, J. Two different carbon-hydrogen complexes in silicon with closely spaced energy levels. United States. https://doi.org/10.1063/1.4928146
Stübner, R., E-mail: ronald.stuebner@physik.tu-dresden.de, E-mail: kolkov@ifpan.edu.pl, Kolkovsky, Vl., E-mail: ronald.stuebner@physik.tu-dresden.de, E-mail: kolkov@ifpan.edu.pl, and Weber, J. 2015. "Two different carbon-hydrogen complexes in silicon with closely spaced energy levels". United States. https://doi.org/10.1063/1.4928146.
@article{osti_22494714,
title = {Two different carbon-hydrogen complexes in silicon with closely spaced energy levels},
author = {Stübner, R., E-mail: ronald.stuebner@physik.tu-dresden.de, E-mail: kolkov@ifpan.edu.pl and Kolkovsky, Vl., E-mail: ronald.stuebner@physik.tu-dresden.de, E-mail: kolkov@ifpan.edu.pl and Weber, J.},
abstractNote = {An acceptor and a single donor state of carbon-hydrogen defects (CH{sub A} and CH{sub B}) are observed by Laplace deep level transient spectroscopy at 90 K. CH{sub A} appears directly after hydrogenation by wet chemical etching or hydrogen plasma treatment, whereas CH{sub B} can be observed only after a successive annealing under reverse bias at about 320 K. The activation enthalpies of these states are 0.16 eV for CH{sub A} and 0.14 eV for CH{sub B}. Our results reconcile previous controversial experimental results. We attribute CH{sub A} to the configuration where substitutional carbon binds a hydrogen atom on a bond centered position between carbon and the neighboring silicon and CH{sub B} to another carbon-hydrogen defect.},
doi = {10.1063/1.4928146},
url = {https://www.osti.gov/biblio/22494714}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 5,
volume = 118,
place = {United States},
year = {Fri Aug 07 00:00:00 EDT 2015},
month = {Fri Aug 07 00:00:00 EDT 2015}
}