skip to main content

SciTech ConnectSciTech Connect

Title: Local impedance measurement of an electrode/single-pentacene-grain interface by frequency-modulation scanning impedance microscopy

The device performances of organic thin film transistors are often limited by the metal–organic interface because of the disordered molecular layers at the interface and the energy barriers against the carrier injection. It is important to study the local impedance at the interface without being affected by the interface morphology. We combined frequency modulation atomic force microscopy with scanning impedance microscopy (SIM) to sensitively measure the ac responses of the interface to an ac voltage applied across the interface and the dc potential drop at the interface. By using the frequency-modulation SIM (FM-SIM) technique, we characterized the interface impedance of a Pt electrode and a single pentacene grain as a parallel circuit of a contact resistance and a capacitance. We found that the reduction of the contact resistance was caused by the reduction of the energy level mismatch at the interface by the FM-SIM measurements, demonstrating the usefulness of the FM-SIM technique for investigation of the local interface impedance without being affected by its morphology.
Authors:
;  [1] ;  [1] ;  [2]
  1. Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
22494710
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ATOMIC FORCE MICROSCOPY; CAPACITANCE; CARRIERS; ELECTRIC POTENTIAL; ELECTRODES; ENERGY LEVELS; FREQUENCY MODULATION; IMPEDANCE; INTERFACES; METALS; MORPHOLOGY; ORGANIC MATTER; PENTACENE; THIN FILMS; TRANSISTORS