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Title: Lifetime analysis of laser crystallized silicon films on glass

Only recently, the quality of liquid phase crystallized silicon directly on glass substrates made a huge leap towards the quality of multi-crystalline wafers with open circuit voltages well above 600 mV. In this paper, we investigate the material quality in order to identify the factors limiting further performance improvements. We employ photoluminescence imaging on a state of the art test structure with lifetime calibration by transient photoluminescence. The resulting lifetime map is converted into an effective diffusion length map and the origin of regions with short lifetimes is investigated with electron backscattering and transmission electron microscopy. High local dislocation densities in areas with dissociated coincidence site lattice boundaries were found to be responsible for the localised quenching of the photoluminescence signal.
Authors:
; ;  [1] ; ; ; ;  [2]
  1. Helmholtz-Zentrum Berlin für Materialien und Energie GmbH - Institut Silizium-Photovoltaik, Berlin (Germany)
  2. University of New South Wales, Sydney (Australia)
Publication Date:
OSTI Identifier:
22494709
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BACKSCATTERING; CALIBRATION; CRYSTALLIZATION; DIFFUSION LENGTH; DISLOCATIONS; ELECTRIC POTENTIAL; ELECTRONS; GLASS; LASER RADIATION; PHOTOLUMINESCENCE; QUENCHING; SERVICE LIFE; SIGNALS; SILICON; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY