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Title: Fermi level pinning in metal/Al{sub 2}O{sub 3}/InGaAs gate stack after post metallization annealing

The effect of post metal deposition annealing on the effective work function in metal/Al{sub 2}O{sub 3}/InGaAs gate stacks was investigated. The effective work functions of different metal gates (Al, Au, and Pt) were measured. Flat band voltage shifts for these and other metals studied suggest that their Fermi levels become pinned after the post-metallization vacuum annealing. Moreover, there is a difference between the measured effective work functions of Al and Pt, and the reported vacuum work function of these metals after annealing. We propose that this phenomenon is caused by charging of indium and gallium induced traps at the annealed metal/Al{sub 2}O{sub 3} interface.
Authors:
; ; ;  [1] ; ; ;  [2]
  1. Department of Materials Science and Engineering, Technion—Israel Institute of Technology, Haifa 32000 (Israel)
  2. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States)
Publication Date:
OSTI Identifier:
22494707
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM; ALUMINIUM OXIDES; ANNEALING; DEPOSITION; ELECTRIC POTENTIAL; FERMI LEVEL; GALLIUM; GALLIUM ARSENIDES; GOLD; INDIUM; INDIUM ARSENIDES; PLATINUM; WORK FUNCTIONS