Fermi level pinning in metal/Al{sub 2}O{sub 3}/InGaAs gate stack after post metallization annealing
Journal Article
·
· Journal of Applied Physics
- Department of Materials Science and Engineering, Technion—Israel Institute of Technology, Haifa 32000 (Israel)
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States)
The effect of post metal deposition annealing on the effective work function in metal/Al{sub 2}O{sub 3}/InGaAs gate stacks was investigated. The effective work functions of different metal gates (Al, Au, and Pt) were measured. Flat band voltage shifts for these and other metals studied suggest that their Fermi levels become pinned after the post-metallization vacuum annealing. Moreover, there is a difference between the measured effective work functions of Al and Pt, and the reported vacuum work function of these metals after annealing. We propose that this phenomenon is caused by charging of indium and gallium induced traps at the annealed metal/Al{sub 2}O{sub 3} interface.
- OSTI ID:
- 22494707
- Journal Information:
- Journal of Applied Physics, Vol. 118, Issue 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
The effect of post oxide deposition annealing on the effective work function in metal/Al{sub 2}O{sub 3}/InGaAs gate stack
Indium out-diffusion in Al{sub 2}O{sub 3}/InGaAs stacks during anneal at different ambient conditions
Border trap reduction in Al{sub 2}O{sub 3}/InGaAs gate stacks
Journal Article
·
Mon May 19 00:00:00 EDT 2014
· Applied Physics Letters
·
OSTI ID:22494707
+2 more
Indium out-diffusion in Al{sub 2}O{sub 3}/InGaAs stacks during anneal at different ambient conditions
Journal Article
·
Mon Jun 16 00:00:00 EDT 2014
· Applied Physics Letters
·
OSTI ID:22494707
+1 more
Border trap reduction in Al{sub 2}O{sub 3}/InGaAs gate stacks
Journal Article
·
Mon Nov 16 00:00:00 EST 2015
· Applied Physics Letters
·
OSTI ID:22494707
+3 more