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Title: High temperature coefficient of resistance of low-temperature-grown VO{sub 2} films on TiO{sub 2}-buffered SiO{sub 2}/Si (100) substrates

The introduction of a TiO{sub 2} buffer layer significantly improved the temperature coefficient of resistance (TCR), a measure of the sharpness of the metal–insulator transition, for films of VO{sub 2} grown on SiO{sub 2}/Si (100) substrates at growth temperatures below 670 K. X-ray diffraction and Raman scattering measurements revealed that polycrystalline VO{sub 2} films were formed on the TiO{sub 2}-buffered substrates at low temperatures below 600 K, whereas amorphous films were formed at these temperatures on SiO{sub 2}/Si (100) substrates without a TiO{sub 2} buffer layer. Electron microscopy studies confirmed that the TiO{sub 2} buffer layer enhanced the grain growth of VO{sub 2} films at low growth temperatures. The VO{sub 2} films grown at 600 K on TiO{sub 2}-buffered substrates showed a large TCR of more than 80%/K as a result of the improved crystallinity and grain size of the VO{sub 2} films. Our results provide an effective approach toward the integration of VO{sub 2}-based devices onto Si platforms at process temperatures below 670 K.
Authors:
; ;  [1] ; ;  [2]
  1. DENSO Corporation, Aichi 470-0111 (Japan)
  2. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8562 (Japan)
Publication Date:
OSTI Identifier:
22494706
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRON MICROSCOPY; GRAIN GROWTH; GRAIN SIZE; POLYCRYSTALS; RAMAN EFFECT; SILICON; SILICON OXIDES; SUBSTRATES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; TITANIUM OXIDES; VANADIUM OXIDES; X-RAY DIFFRACTION